METHOD FOR SET PROGRAMMING OF PHASE CHANGE MEMORY ARRAY, AND WRITE DRIVER CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a method for set programming of a phase change memory array, and to provide a write driver circuit. SOLUTION: The method for set programming of the phase change memory array provided with a plurality of phase change cells which are changed into the state of reset resistance or set resistance in response to an applied current pulse comprises stages for applying a set current pulse including first to n-th stages where a minimum current is not less than a reference current and a current is reduced step by step to the phase change cells. The reference current is a current which keeps the phase change cells to a crystalization temperature where the crystalization of the phase change cells is started. The current at the first stage is a current which makes a phase change cell requiring a maximum current a set resistance state among the plurality of phase change cells to be the set resistance state. COPYRIGHT: (C)2005,JPO&NCIPI