| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can prevent the chipping or a peeling of insulating film low in dielectric constant. <P>SOLUTION: A semiconductor device is formed in a wafer 11, and after forming a multilayer film 15 including an insulating film 16 low in dielectric constant in an upper layer of the wafer, a metallization layer functioning as at least one side between a positioning mark 13 and test pads of 14-1, 14-2 is formed on a dicing line 12 in the above-mentioned multilayer film. And next, a region covering the above-mentioned positioning mark and the test pads on the dicing line is irradiated by laser. And semiconductor chips 11-1, 11-2 are formed by making a semiconductor wafer divide into individual pieces in such a way that at least one side between a positioning mark of the dicing line and the test pads is mechanically diced at a width narrower than an exposure area 18 of the laser. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
