发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device which can set up connection between layers, without giving damages to the layers in the lower-layer side. SOLUTION: The manufacturing method of semiconductor device comprises the steps of forming conductive members Ms, Md to the predetermined positions of a semiconductor film 11; forming an insulating film 12 over the entire surface of a substrate 10, except for the conductive members Ms, Md; and forming on the insulating film 12 a conductive film 13, which is electrically connected with the semiconductor film 11 via the conductive members Ms, Md. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005251987(A) 申请公布日期 2005.09.15
申请号 JP20040060519 申请日期 2004.03.04
申请人 SEIKO EPSON CORP 发明人 YUDASAKA KAZUO;TANAKA HIDEKI
分类号 H01L21/288;H01L21/20;H01L21/336;H01L21/768;H01L29/04;H01L29/786;(IPC1-7):H01L21/768 主分类号 H01L21/288
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