| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device that secures the separation capacity of a region for separating elements and can be fined, and can reduce a low dark current and the number of clear defects, and to provide a method for manufacturing the solid-state image pickup device. SOLUTION: In the method for manufacturing the solid-state image pickup device, a pad insulation film 2 and an oxidation resistant film 3 are formed on a silicon substrate 1 for patterning, thus forming an opening 4 for opening the region for separating elements. Then, a p-type ion is implanted into the silicon substrate 1 with the oxidation resistant film 3 as a mask to form a p-type ion implantation region 5. Then, wet etching is made by a TMAH liquid, and a groove 6 is formed on the silicon substrate 1. After that, the groove 6 is buried by an embedded oxide film 12, thus forming element separation. COPYRIGHT: (C)2005,JPO&NCIPI
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