METHOD FOR FORMING SILICON NITRIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film that can keep high film quality and is superior in coating capability to a steps or the like. SOLUTION: A first gas containing silicon and nitrogen and a second gas containing nitrogen and oxygen are made to act on a heated catalyst in a pressure-reduced atmosphere, thus forming the silicon nitride film. COPYRIGHT: (C)2005,JPO&NCIPI