Method for testing semiconductor integrated circuit

摘要

An inventive method is a method for testing a semiconductor integrated circuit that includes a memory circuit provided between a first storage element and a second storage element. The inventive method includes the steps of: (a) initializing the memory circuit; (b) supplying a test pattern to the first storage element; (c) supplying a memory access signal, which corresponds to the test pattern supplied to the first storage element, to the memory circuit through a path that is used in normal operation; (d) capturing a value output from the memory circuit in response to the memory access signal, into the second storage element through a path that is used in normal operation; and (e) comparing the value captured into the second storage element with an expected value.