发明名称 |
Hollow dielectric for image sensor |
摘要 |
A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
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申请公布号 |
US2005199921(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20040799986 |
申请日期 |
2004.03.12 |
申请人 |
HSU TZU-HSUAN;WUU SHOU-GWO;CHIEN HO-CHING;YAUNG DUN-NIAN |
发明人 |
HSU TZU-HSUAN;WUU SHOU-GWO;CHIEN HO-CHING;YAUNG DUN-NIAN |
分类号 |
H01L21/82;H01L27/146;H01L31/062;(IPC1-7):H01L31/062 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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