Fabrication of static random access memory device comprises forming two conductor patterns on cell area of substrate and third conductor pattern in periphery area, and forming third spacer on sidewall of third conductor pattern

摘要

Fabrication of static random access memory (SRAM) device comprises forming two conductor patterns on a cell area of a semiconductor substrate and a third conductor pattern in a periphery area of the substrate; stacking first to third insulating layers to substrate; forming first mask over substrate; and forming a third spacer on a sidewall of the third conductor pattern by etching back the third to first insulation layers. Fabrication of static random access memory device comprises forming two conductor patterns (204a-b) on a cell area of a semiconductor substrate (201) and a third conductor pattern (204c) in a periphery area of the substrate; stacking first to third insulating layers (205-207) to substrate; forming first mask over substrate to expose the periphery area of substrate; forming a third spacer (213) on a sidewall of the third conductor pattern by etching back the third to first insulation layers in the exposed periphery area; removing the first mask; removing the third insulating layer; forming a second mask over the substrate to expose the cell area of the substrate; forming two spacers on sidewalls of the two conductor patterns respectively by etching back the second and first insulating layers in the exposed cell area; and removing the second mask.