发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To develop a semiconductor light emitting element which ensures technically simple mass production with extremely sufficiently reproducible element characteristics by being irradiated with homogeneous mixed light. <P>SOLUTION: A semiconductor substrate 1 has a semiconductor multilayer structure 7 which is irradiated with an electromagnetic beam of a first wavelength region including a beam having at least a blue spectral region or a green spectral region during the operation of the semiconductor light emitting element. A luminescence conversion element converts a beam coming from the first wavelength region into a second wavelength region different from the first wavelength region, the semiconductor luminous element radiates a mixed beam composed of the beam of the first wavelength region and the beam of the second wavelength region and the luminescence conversion element has a luminescence conversion layer and/or luminescence conversion envelope 5 formed of a silicon material including a fluorescent material 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005252293(A) 申请公布日期 2005.09.15
申请号 JP20050112809 申请日期 2005.04.08
申请人 SIEMENS AG 发明人 REEH ULRIKE;HOEHN KLAUS;STATH NORBERT;WAITL GUENTHER;SCHLOTTER PETER;SCHMITT ROLF;SCHNEIDER JUERGEN
分类号 C09K11/00;C09K11/08;C09K11/56;C09K11/62;C09K11/77;C09K11/79;C09K11/80;F21K2/00;F21V9/08;F21Y101/02;G02F1/13357;H01L33/48;H01L33/50;H01L33/56;H01S5/32 主分类号 C09K11/00
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