| 摘要 |
PROBLEM TO BE SOLVED: To provide chemical vapor deposition equipment and a thin film growth method, capable of preventing particles from sticking to a substrate and growing a high quality thin film. SOLUTION: There are provided a vacuum treatment room 4, a susceptance 2 for downwardly installing film growth sides of plural sheets of substrates 3, a heater 11 arranged above the susceptance 2, a primary barrier gas supply portion 9 for supplying a barrier gas to a top face of the susceptance 2, and a secondary barrier gas supply portion 10 for supplying the barrier gas to a top face of the heater 11. Flow rates of the barrier gases supplied from the primary and secondary barrier gas supply portions 9, 10 are independently controlled respectively. It is possible to form a film in which a sticking of the particles is suppressed, by appropriately setting a supply quantity ratio of the barrier gases supplied from the primary and secondary barrier gas supply portions 9, 10 and a ratio of a supply quantity of the barrier gases and that of a material gas. COPYRIGHT: (C)2005,JPO&NCIPI
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