| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition which has an improved selection ratio for chemical polishing of silica and silicon nitride for STI processing, and to provide a method for the chemical polishing. <P>SOLUTION: The composition is a water composition useful for polishing silica and silicon nitride on a semiconductor wafer. The composition includes a zwitterion ion compound of 0.01-5 wt%, a carboxylic acid polymer of 0.01-5 wt%, abrasive grains of 0.02-6 wt%, a cationic compound of 0-5 wt%, and water as a residual component. The zwitterion ion compound has a structure as shown by the chemical formula, where n stands for an integer, Y for hydrogen or alkyl group, Z for carboxyl, sulfeto, or oxygen, M for nitrogen, phosphorus, or sulfur atom, and X<SB>1</SB>, X<SB>2</SB>, X<SB>3</SB>for separate substituent each selected from a group consisting of hydrogen, alkyl group, and aryl group. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
