| 摘要 |
The semiconductor device comprises a device isolation region 14 formed in a semiconductor substrate 10 , a lower electrode 16 formed in a device region 12 defined by the device isolation region and formed of an impurity diffused layer, a dielectric film 18 of a thermal oxide film formed on the lower electrode, an upper electrode 20 formed on the dielectric film, an insulation layer 26 formed on the semiconductor substrate, covering he upper electrode, a first conductor plug 30 a buried in a first contact hole 28 a formed down to the lower electrode, and a second conductor plug 30 b buried in a second contact hole 28 b formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode 20 is not formed in the device isolation region 14 , whereby the short-circuit between the upper electrode 20 and the lower electrode 16 in the cavity can be prevented. Thus, a capacitor of high reliability can be provided.
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