| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cerium oxide polishing agent which can polish a substrate at high speed without scratching irrespective of the film quality of the substrate, and also to provide a polishing method employing the cerium oxide polishing agent. <P>SOLUTION: A cerium oxide producing method is characterized by quickly heating a cerium salt to raise the temperature thereof up to a firing temperature and burning it. The cerium oxide polishing agent contains cerium oxide produced according to the method, and purified water. The polishing agent contains slurry which is obtained by dispersing, in a medium, cerium oxide particles having an area intensity ratio (main peak/sub-peak) of 3.20 or more between the main peak ranging from 27 to 30°and the sub-peak ranging from 32 to 35°in a powder X-ray diffraction chart. The polishing agent contains slurry obtained by dispersing cerium oxide particles having a bulk density of 6.5 g/cm<SP>3</SP>or less, in a medium. The polishing agent contains slurry obtained by dispersing abrasive grains each having a cavity, in a medium. The substrate polishing method for polishing the predetermined substrate is characterized by using the above polishing agent. A semiconductor producing method is characterized by including a polishing step carried out by using the above polishing agent. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
