发明名称 |
THIN-FILM TRANSISTOR AND THIN-FILM TRANSISTOR SUBSTRATE AND PRODUCTION METHODS FOR THEM AND LIQUID CRYSTAL DISPLAY UNIT USING THESE AND RELATED DEVICE AND METHOD, AND, SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM FORMED BY USING THIS AND TRANSPARENT ELECTRODE AND RELATED DEVICE AND METHOD |
摘要 |
<p>A thin-film transistor substrate provided with a transparent conductive film almost free from residues or the like by etching and a production method therefore, and a liquid crystal display unit using the thin-film transistor substrate. The thin-film transistor substrate comprises a transparent substrate, a source electrode provided on the transparent substrate, a drain electrode provided on the transparent substrate, and a transparent pixel electrode provided on the transparent substrate, wherein the transparent pixel electrode is a transparent conductive film containing indium oxide as a main component and one or two or more kinds of oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected with the source electrode or the drain electrode; and a production method therefore; and a liquid crystal display unit using the thin-film transistor substrate.</p> |
申请公布号 |
WO2005086180(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
WO2005JP03489 |
申请日期 |
2005.03.02 |
申请人 |
IDEMITSU KOSAN CO., LTD.;INOUE, KAZUYOSHI;TOMAI, SHIGEKAZU;MATSUBARA, MASATO |
发明人 |
INOUE, KAZUYOSHI;TOMAI, SHIGEKAZU;MATSUBARA, MASATO |
分类号 |
C23C14/08;C23C14/34;G02F1/1343;G02F1/1362;G02F1/1368;H01B5/14;H01L21/28;H01L21/285;H01L21/308;H01L21/3205;H01L21/336;H01L21/77;H01L27/12;H01L29/45;H01L29/786;(IPC1-7):H01B5/14;G02F1/134;G02F1/136;H01L21/320 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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