| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching system by which impedance matching by matching equipment is performed in a short time. <P>SOLUTION: The etching system 1 includes a process chamber 11, a base 12 on which a silicon substrate K is mounted, a high-frequency power supply 13 which applies high-frequency power to the base 12, a process gas supplying unit 20 which supplies an etching gas and a protection film forming gas into the process chamber 11 while adjusting supply flow rates of these gases, a coil 31 arranged at the outer periphery of the process chamber 11, a high-frequency power supply 33 which applies high-frequency power to the coil 31 and makes plasmatic the gas in the process chamber 11, a capacitor 32 connected in parallel with the coil 31, and the matching equipment 34 which includes variable capacitors 35, 36 and is connected between the coil 31 and the high-frequency power supply 33. The etching system is constituted so that the etching process by gas of which the main component is the etching gas, and a protection film forming process by gas of which the main component is the protection film forming gas, may be performed alternately to the silicon substrate K. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
