| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the contamination of a substrate due to an oxide of a high-melting point metal constituting a part of a polymetal gate. <P>SOLUTION: After a gate electrode 7A with a polymetal structure in which a WN<SB>x</SB>film and a W film are stacked on the upper part of a polycrystal silicon film, when an oxidation process for regenerating a gate insulating film 6 is performed, the amount of a W oxide 27 attached to the surface of a wafer 1 is reduced by raising and reducing in temperature the wafer 1 under the condition that the W oxide 27 on the side wall of the gate electrode 7A is reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2005252284(A) |
申请公布日期 |
2005.09.15 |
| 申请号 |
JP20050104582 |
申请日期 |
2005.03.31 |
| 申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
YAMAMOTO NAOKI;UCHIYAMA HIROYUKI;SUZUKI NORIO;NISHITANI EISUKE;KIMURA SHINICHIRO;HOZAWA KAZUYUKI |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/8238;H01L21/8242;H01L21/8247;H01L27/092;H01L27/108;H01L27/115;H01L29/423;H01L29/49;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
