| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pattern forming method whereby it is possible to form a uniform and fine-sized hole pattern on a processed film through the use of a heat shrink method. <P>SOLUTION: A heat shrink method is used to form a first hole pattern 7' and a second hole pattern 8' on a processed film 2. The second hole pattern 8' is disposed to encircle the periphery of the first pattern hole 7'. Then, the second hole pattern 8' is coated to form a second resist pattern 12 having an opening corresponding to the first hole pattern 7'. Thereafter, the processed film 2 is etched with the second resist pattern 12 and first resist pattern 6 as a mask. Since the only first hole pattern 7' is transferred to the processed film 2, it is possible to form a hole having a uniform and fine size on the processed film 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
