发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a pattern forming method capable of effectively preventing the occurrence of pattern defects by improving the hydrophilicity of a resist. SOLUTION: In the pattern forming method including a step of applying a positive photosensitive composition comprising a fluorocarbon resin on a substrate to be worked; a step of heating the photosensitive composition after the application; a step of exposing a surface of the photosensitive composition to an actinic ray of≤250 nm wavelength to form a pattern; a step of heating the substrate to be worked with a photosensitive composition layer after the exposure; and a step of developing the exposed photosensitive composition, a step of irradiating the whole surface of the photosensitive composition layer with light of 180-200 nm wavelength is included. The irradiation with light of 180-200 nm wavelength may be carried out immediately after or immediately before the pattern forming exposure. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005250084(A) 申请公布日期 2005.09.15
申请号 JP20040060087 申请日期 2004.03.04
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 OTOGURO AKIHIKO
分类号 G03F7/38;H01L21/027;(IPC1-7):G03F7/38 主分类号 G03F7/38
代理机构 代理人
主权项
地址