METHODS OF PROCESSING SEMICONDUCTOR WAFER BACKSIDES HAVING LIGHT EMITTING DEVICES (LEDS) THEREON AND LEDS SO FORMED
摘要
Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the carrier. The first thickness of the wafer is reduced to a second thickness that is less than the first thickness by processing the backside of the wafer. The carrier is separated from the plurality of LEDs on the wafer and the wafer is cut to separate the plurality of LEDs from one another. Related devices are also disclosed.
申请公布号
WO2005048363(A3)
申请公布日期
2005.09.15
申请号
WO2004US37934
申请日期
2004.11.12
申请人
CREE, INC.;SLATER, DAVID, B., JR;DONOFRIO, MATTHEW