SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

[PROBLEMS] To provide a semiconductor element having a novel penetrating electrode structure which maintains sufficient yield, suppresses cost increase and maintains reliability and a manufacturing method thereof. [MEANS FOR SOLVING PROBLEMS] The penetrating electrodes (31, 32, 33) and a semiconductor substrate (1) are made of a same material, and the penetrating electrodes (31, 32, 33) have a structure wherein electrical insulation between the penetrating electrodes and the semiconductor substrate can be obtained by PN junction, without an insulating film, by forming an opposite type diffusion layer to the semiconductor substrate. Therefore, insulating film formation is not required, cost can be reduced and a reliability can be improved.