| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable easy and precise read-out of data by setting specific qualification, when writing is carried out to a selected storage cell. <P>SOLUTION: In a storage cell 100, a structure is installed, in which an inter-electrode substance layer 13 is clamped between an electrode 11 (first electrode) and an electrode 12 (second electrode), and data are stored by variation of resistance value between the electrode 11 and the electrode 12. The resistance value is set to R_mem_high, when a storage element is in a state of high resistance; resistance value, when the storage element is in a state of low resistance, is set to R_mem_low1; the resistance value of a load circuit 111A is set to R_load; read-out voltage is set to Vread, when voltage of a second power source 107 is made reference voltage; and the threshold voltage is set to Vth_critical. When data are written to the storage cell, low resistance status is produced, by satisfying specific relations with these parameters. The load circuit 111A is also formed of an element, having the same structure with a storage element of the storage cell 100. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
