发明名称 |
METHOD FOR OPERATION OF ELECTRICALLY WRITABLE AND ERASABLE MEMORY CELL AND STORAGE DEVICE FOR ELECTRICAL MEMORY |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for operation of an electrically writable and erasable memory cell where occurrence of an error is avoided properly. <P>SOLUTION: In the method for operation of the memory cell, the memory cell has a channel area (2) in which operation is possible in a first direction and a second direction, and the memory cell is characterized by at least one effective parameter. Information is stored as a difference between a parameter operating in the channel area in the first direction and a parameter operating in the channel area in the second direction. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005251384(A) |
申请公布日期 |
2005.09.15 |
申请号 |
JP20050063161 |
申请日期 |
2005.03.07 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEPPE JOACHIM;ISLER MARK;LUDWIG CHRISTOPH;SACHSE JENS-UWE;FISCHER JAN-MALTE;MIKALO RICARDO PABLO |
分类号 |
G11C16/02;G11C11/56;G11C16/04;G11C16/26;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/02;H01L21/824 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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