| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor element storing package in which the thickness of an Au plated film can be thinned, and both of solder wettability and joint intensity on a soldered joint can be obtained; and to provide a method for manufacturing the semiconductor element storing package. SOLUTION: The semiconductor element storing package has wire bonding pads 18, 18a for electrically connecting at least a semiconductor element 11, and constituted so that the surfaces of the wire bonding pads 18, 18a are coated with a 1st Ni plated film 20, a 2nd Ni plated film 25, and an Au plated film 23 or coated with the 2nd Ni plated film 25 and the Au plated film 23. An Ni sintering plated film 22 is formed by heating the 1st Ni plated film 20 and the 2nd Ni plated film 25 of the wire bonding pads 18, 18a in a reduction atmosphere or heating the 2nd Ni plated film 25 in the reduction atmosphere, and the Au plated film 23 is formed on the Ni sintering plated film 22. COPYRIGHT: (C)2005,JPO&NCIPI
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