发明名称 HIGH CURRENT DENSITY ION SOURCE
摘要 PROBLEM TO BE SOLVED: To provide a high current density ion beam in which electric power consumption is low (50 W or lower), kinetic energy and an energy diffusion rate are low at an initial stage, the temperature of ions included in the beam is also slightly higher than room temperature (approximately 27°C) and magnetic-field confinement and water cooling are unnecessary for a beam source. SOLUTION: The beam source is provided with (1) a 2.45 GHz microwave source exciting plasma in a plasma gas source, (2) a DC power source generating electron avalanche multiplication in the plasma gas source, (3) a cathode electrode supplying secondary electrons by ion impact and (4) a vacuum device to make pressure in a plasma gas source external part approximately 10<SP>-4</SP>mbar or lower. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005251743(A) 申请公布日期 2005.09.15
申请号 JP20050035995 申请日期 2005.02.14
申请人 THAILAND RESEARCH FUND 发明人 TANTRAPORN WIROJANA;KITSUMPUN SURAWUT
分类号 H01J27/16;H01J7/24;H01J37/08;H01J49/10;H05B31/26;H05H1/54;(IPC1-7):H01J27/16 主分类号 H01J27/16
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