发明名称 |
Method and structure for non-single-polycrystalline capacitor in an integrated circuit |
摘要 |
A method of forming a non-single-crystalline capacitor in an integrated circuit. It includes the steps of forming a first non-single-crystalline layer on a gate dielectric layer of a substrate of an integrated circuit. Next, a capacitor dielectric layer is formed on the first non-single-crystalline layer, and a second non-single-crystalline layer is formed on the capacitor dielectric layer. Portions of the second non-single-crystalline layer are removed to define a top plate of the capacitor. Portions of the capacitor dielectric layer are removed to define a dielectric of the capacitor. Also, portions of the first non-single-crystalline layer are removed to define the bottom plate of the capacitor.
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申请公布号 |
US2005202629(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20040798559 |
申请日期 |
2004.03.12 |
申请人 |
INTERSIL AMERICAS INC. |
发明人 |
WOODBURY DUSTIN A.;KINZIG ROBERT J.;BEASOM JAMES D.;VALADE TIMOTHY A.;HEMMENWAY DONALD F.;ELSHOT KITTY |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
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