发明名称 |
Mosgate driver integrated circuit with adaptive dead time |
摘要 |
An IGBT device, comprising a substrate having a conductivity type; a drain electrode arranged on a bottom surface of the substrate; an epitaxial layer arranged on the substrate and having a conductivity type opposite that of the substrate; at least one body diffusion arranged within the epitaxial layer and having a conductivity type the same as that of the substrate; at least one source diffusion arranged within the body diffusion and having a conductivity type the same as that of the epitaxial layer; a gate electrode to control the IGBT device; a source electrode electrically coupled to the body diffusion and the source diffusion; an additional diffusion arranged within the epitaxial layer and having a conductivity type the same as that of the substrate, the additional diffusion forming a collector region of a vertical bipolar arrangement in the IGBT; and a sense electrode electrically coupled to the additional diffusion; wherein the presence of minority carriers in the epitaxial layer may be detected in accordance with a voltage of the sense electrode.
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申请公布号 |
US2005200384(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050127462 |
申请日期 |
2005.05.11 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
NADD BRUNO |
分类号 |
H01L21/822;H01L27/04;H01L29/78;H02M1/00;H02M1/088;H02M1/38;H03K17/082;H03K17/16;H03K17/687;(IPC1-7):H03K19/017 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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