| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask for exposure to extreme ultraviolet rays in which it does not need exfoliation, and the lowering or variations of a reflectivity is unlikely to occur owing to uneven film thickness, and further a highly conductive intermediate film is formed, in a mask for exposure to extreme ultraviolet rays in which a multilayer film providing a reflection region for exposure light is formed on a substrate, and a thin film pattern is formed on the multilayer film for absorption of exposure light, and further an intermediate film is formed between the multilayer film and the thin film for absorption; and also to provide a blank for the mask and a pattern transfer method using the mask. <P>SOLUTION: The intermediate film has its thickness specified to a variation rate of reflection of ≤±1% with respect to the change of the film thickness within ±10 Å from the characteristics of reflection to the film thickness. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
