| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus for carring out a plasma chemical vapor deposition (PCVD) process, in which leakage of high frequency energy is small even when a high frequency output level of about 2.5 kW is used so as to enhance the vapor deposition speed in PCVD process for vapor depositing a doped or undoped layer onto the interior of a glass substrate tube. <P>SOLUTION: In the apparatus for carring out a PCVD process, microwaves from a microwave generator are carried to an applicator 10 via a waveguide 11. Via a resonator cavity 12 and a slit 13 in the applicator, the high-frequency energy from the microwaves is coupled into a plasma which is present in the substrate tube 14 near the resonator cavity 12. Chokes 15, 16 are present in the applicator, and prevent leakage of high-frequency energy. By using a length l for the chokes smaller than the quarter-wavelength, the effect of the choke is optimized. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
