| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the lowering of a polishing rate when a polishing agent includes an ionic surface activating agent in a polishing method and a manufacturing method of semiconductor device using a CMP (Chemical Mechanical Polishing) method. <P>SOLUTION: In the polishing method for polishing a polishing surface with the polishing agent including the polishing particle and ionic interface activating agent using the CMP method, the polishing of the polishing surface is conducted using the polishing agent including a minus ion of 50 ppm or more. Particularly, as the minus ion, a residual substance is used which is generated in the course of generating the polishing particle. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
