发明名称 Pixel and imager device having high-k dielectrics in isolation structures
摘要 An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels around the photodiode. By creating a substrate region surrounding the charge-collection region of the photodiode, the photodiode may be electrically isolated from the bulk substrate. This region fixes the depletion region so that it does not migrate toward the surface of the substrate or the STI region. By doing so, the region prevents charge from being depleted from the substrate and the accumulation region, reducing dark current.
申请公布号 US2005202584(A1) 申请公布日期 2005.09.15
申请号 US20050124254 申请日期 2005.05.09
申请人 MOULI CHANDRA 发明人 MOULI CHANDRA
分类号 H01L21/8238;H01L27/146;H01L31/00;H01L31/0352;(IPC1-7):H01L21/823 主分类号 H01L21/8238
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