发明名称 Solid-state imaging device
摘要 A solid-state imaging device having, in each of unit pixels, an on-chip microlens composed of plural convex lens parts for each of photoelectric conversion elements provided on a semiconductor chip is disclosed. A floating diffusion part and a signal-charge read gate for taking out a signal charge from the photoelectric conversion element are provided on a region positioned in a boundary of each convex lens part of the on-chip microlens. A wiring for the floating diffusion part and a wiring for the read gate are provided along the respective boundaries of the convex lens parts of the on-chip microlens. In this device, the film thickness of the on-chip microlens can be reduced with regard to the area of each unit pixel, thereby facilitating the process control and enhancing the light transmission efficiency. It is also possible to enhance the circuit wiring efficiency in each unit pixel while avoiding any incomplete charge transfer to consequently improve the picture quality.
申请公布号 US2005199923(A1) 申请公布日期 2005.09.15
申请号 US20050117845 申请日期 2005.04.29
申请人 SONY CORPORATION 发明人 SUGIYAMA TOSHINOBU
分类号 G02B3/00;H01L27/14;H01L27/146;H01L27/148;H01L31/0232;H01L31/062;H01L31/10;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L31/062 主分类号 G02B3/00
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