| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power using a bonding wire which can obtain required and sufficient electrical performance, and also can be manufactured easily irrespective of the number of parallel semiconductor devices. <P>SOLUTION: The semiconductor device for electric power comprises a first insulating substrate 23 in which a plurality of first semiconductor devices, bonding wires, and electrode patterns 21a, 20a and 22a of a source, a drain and a gate where electric connections of the respective first semiconducor elements are formed by soldering are formed, and a second insulating substrate 23 in which a plurality of second semiconductor devices, bonding wires, and electrode patterns 21b, 20b and 22b of the source, the drain and the gate where eledctric connection of the respective second semiconductor elements are formed by solderijng are formed. Each gate electrode pattern of on the first and second insulating substrate puts together gate wirings of the respective semiconductor devices into one. Electrode patterns of the source and the gate on the first insulating substrate and electrode patterns of the source and the gate on the second insulating substrate are arranged in substantially parallel and at a short distance, respectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
