SOLID-STATE IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging device which eliminates the potential barrier that poses as impediment to the transfer of electric charges, by suppressing the diffusion below adjacent transfer electrodes. SOLUTION: A transfer channel region 13 is constructed by arranging n+-type storage regions 16 for accumulating electric charges, and n--type potential barrier regions 17 for forming steps in potential depth, in the horizontal direction. An n+-type barrier reducing region 18 for reducing the potential barrier is formed between the adjacent transfer channel regions, in proportion to the gap length between the adjacent transfer electrodes 15. On the surface of the transfer channel regions 13, a gate insulating film 14 consisting of a silicon oxide film is formed. On the surface of the gate insulating film 14, the plurality of transfer electrodes 15 formed of polycrystalline silicon are arranged, in parallel with each other at a specified distance. COPYRIGHT: (C)2005,JPO&NCIPI