发明名称 Charged particle beam apparatus, charged particle beam control method, substrate inspection method and method of manufacturing semiconductor device
摘要 A charged particle beam apparatus includes: a charged particle beam generator which generates a charged particle beam; a projection optical system which generates a lens field to focus the charged particle beam on an external substrate; and deflectors arranged so as to surround an optical axis of the charged particle beam; the deflectors generating a deflection field which is superposed on the lens field to deflect the charged particle beam and to control a position to irradiate the substrate, and being configured so that intensity of the deflection field in a direction of the optical axis is changed in accordance with an angle with which the charged particle beam should fall onto the substrate.
申请公布号 US2005199827(A1) 申请公布日期 2005.09.15
申请号 US20050038161 申请日期 2005.01.21
申请人 NAGANO OSAMU 发明人 NAGANO OSAMU
分类号 G21K1/087;A61N5/00;G01N23/00;G03F7/20;G21K1/093;G21K5/04;H01J37/147;H01J37/153;H01L21/027;H01L21/66;(IPC1-7):G01N23/00 主分类号 G21K1/087
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