| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device, capable of increasing electric charge quantity to be handled by a vertical transfer channel, without narrowing the light-receiving section or the transfer gate region. SOLUTION: The device is provided with a plurality of light-receiving sections 4, a vertical transfer channel 5, and sets of vertical transfer electrodes 8, 9, 10, 11, on a semiconductor substrate surface 90. Pixel-separating regions 7 separate sections 4, 4 arranged in a column direction. The width W1 of a second part 5b, equivalent to a portion corresponding next to the region 7 of the channel 5, is larger than the width W0 of a first part 5a, equivalent to the portion corresponding next to the portion 4 of the channel 5. COPYRIGHT: (C)2005,JPO&NCIPI
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