| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating gate type semiconductor device in which the deterioration of the element characteristics caused by the influence of a seam and a void generated in a deposited insulating layer is suppressed and to provide the method of manufacturing the same. SOLUTION: A gate trench 21 is formed by dry etching. Then, ion implantation is carried out from the bottom of the gate trench 21. Then, a gate oxide film 24 is formed on the surface of the wall of the gate trench 21 after carrying out a proper clearing process on the surface of the wall of the gate trench 21. Then, an etching protective film 211 is formed on the gate oxide film 24. Then, an insulating film 23 is embedded in the gate trench 21. Then, etchback on a portion of the insulating film 23 is carried out by carrying out dry etching. Then, a gate material 22 is deposited. Finally, etching is carrying out on the deposited gate material 22. Subsequently, a source electrode and a drain electrode are formed. COPYRIGHT: (C)2005,JPO&NCIPI
|
