发明名称 |
Sense amplifier and method for generating variable reference level |
摘要 |
In a sense amplifier and method of generating a variable reference level, the sense amplifier varies a reference voltage level in accordance with variation of a operating voltage. This ensures that on-cell and off-cell margins required to detect data are sufficiently maintained regardless of the variation of the operating voltage in the semiconductor memory device. Read failures that otherwise would be generated due to insufficient voltage sensing margin are thus avoided.
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申请公布号 |
US2005201171(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050076788 |
申请日期 |
2005.03.09 |
申请人 |
CHOI JEONG-UN;KIM SANG-WON;KIM HONG-SEOK |
发明人 |
CHOI JEONG-UN;KIM SANG-WON;KIM HONG-SEOK |
分类号 |
G11C11/34;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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