发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 A nonvolatile semiconductor memory device with a function of executing a verify operation for write data that is input from outside includes a memory cell array including memory cells arranged in a matrix, and a password storage area for storing password data, an input buffer that receives data input from outside, a first retaining circuit that retains input password data or write data, which is input to the input buffer, a verify sense amplifier that detects, at a time of the verify operation, the password data that is read out of the password storage area or data that is read out of the memory cell array, and a coincidence determination circuit that determines whether the input password data coincides with the read-out password data, or determines whether the write data coincides with the read-out data.
申请公布号 US2005201156(A1) 申请公布日期 2005.09.15
申请号 US20040874361 申请日期 2004.06.24
申请人 TOKIWA NAOYA 发明人 TOKIWA NAOYA
分类号 G11C16/02;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/02
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