发明名称 |
Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning |
摘要 |
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
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申请公布号 |
US2005202350(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20040799282 |
申请日期 |
2004.03.13 |
申请人 |
COLBURN MATTHEW E.;CARTER KENNETH R.;MCCLELLAND GARY M.;PFEIFFER DIRK |
发明人 |
COLBURN MATTHEW E.;CARTER KENNETH R.;MCCLELLAND GARY M.;PFEIFFER DIRK |
分类号 |
B29C33/38;G03F7/00;H01L21/768;(IPC1-7):B29C33/38 |
主分类号 |
B29C33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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