发明名称 CMOS image device having high light collection efficiency and method of fabricating the same
摘要 A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.
申请公布号 US2005200734(A1) 申请公布日期 2005.09.15
申请号 US20050065892 申请日期 2005.02.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN YU-JIN;PARK YOUNG-HOON;LEE JAE-KU;LEE JUNE-TAEG;DOH SUNG-WON;KIM BUM-SUK
分类号 H01L27/14;H01L27/146;H01L31/10;H04N5/225;(IPC1-7):H04N5/225 主分类号 H01L27/14
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