发明名称 Light-emitting diode with micro-lens layer
摘要 A light-emitting diode with a micro-lens layer, includes a die substrate, a second epitaxy layer deposited on the top surface of the die substrate, a first epitaxy layer deposited on a portion of the top surface of the second epitaxy layer, a second electrode formed on a portion of the top surface of the second epitaxy layer, a first electrode formed on a portion of the top surface of the first epitaxy layer, and a micro-lens layer mounted on a portion of the top surface of the first epitaxy layer. The micro-lens layer can change the projection angle and the projection path of the light beams radiated within the light-emitting diode in virtue of the diffusion effect caused by the micro-lens, and thereby improving the light-drawing efficiency and the luminance of the light-emitting diode.
申请公布号 US2005199898(A1) 申请公布日期 2005.09.15
申请号 US20040019170 申请日期 2004.12.23
申请人 LIN MING-DER;LIN SAN B. 发明人 LIN MING-DER;LIN SAN B.
分类号 H01L29/22;(IPC1-7):H01L29/22 主分类号 H01L29/22
代理机构 代理人
主权项
地址