发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device includes a semiconductor substrate having a resistivity of at least 30 Omega.cm, a first MISFET formed on the semiconductor substrate to function as a protective element, and a second MISFET protected by the first MISFET.
申请公布号 US2005199955(A1) 申请公布日期 2005.09.15
申请号 US20040847314 申请日期 2004.05.18
申请人 OHGURO TATSUYA 发明人 OHGURO TATSUYA
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L23/62;H01L27/06;H01L27/092;(IPC1-7):H01L23/62 主分类号 H01L27/04
代理机构 代理人
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