发明名称 |
Method and system of forming semiconductor wiring, method and system of fabricating semiconductor device, and wafer |
摘要 |
A vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used; a wafer in which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber; the material of the semiconductor wiring film is evaporated by an evaporation source disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source.
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申请公布号 |
US2005199983(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050100285 |
申请日期 |
2005.04.06 |
申请人 |
SHINMAYWA INDUSTRIES, LTD. |
发明人 |
MARUNAKA MASAO;DOI TOSHIYA;NOSE KOUICHI;TAKIGAWA SHIROU;OTAKE KIYOSHI |
分类号 |
C23C14/24;C23C14/32;C23C14/54;H01J37/32;H01L21/02;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L29/06 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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