发明名称 Method and system of forming semiconductor wiring, method and system of fabricating semiconductor device, and wafer
摘要 A vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used; a wafer in which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber; the material of the semiconductor wiring film is evaporated by an evaporation source disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source.
申请公布号 US2005199983(A1) 申请公布日期 2005.09.15
申请号 US20050100285 申请日期 2005.04.06
申请人 SHINMAYWA INDUSTRIES, LTD. 发明人 MARUNAKA MASAO;DOI TOSHIYA;NOSE KOUICHI;TAKIGAWA SHIROU;OTAKE KIYOSHI
分类号 C23C14/24;C23C14/32;C23C14/54;H01J37/32;H01L21/02;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L29/06 主分类号 C23C14/24
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