MULTI-LAYER OVERLAY MEASUREMENT AND CORRECTION TECHNIQUE FOR IC MANUFACTURING

摘要

A system facilitating measurement and correction of overlay between multiple layers of a wafer (402) is disclosed. The system comprises an overlay target (406) that represents overlay between three or more layers of a wafer (402) and a measurement component (408) that determines overlay error existent in the overlay target (406), thereby determining overlay error between the three or more layers of the wafer (402). A control component (410) can be provided to correct overlay error between adjacent and non-adjacent layers, wherein the correction is based at least in part on measurements obtained by the measurement component (408).