Semiconductor electronic chip trench system with two nitride materials linked by an interface with an electrical contact channel

摘要

A hetero-junction field-effect chip consists of a first III-nitride material with a first energy gap, and a second III nitride material with a second energy gap adjacent to the first at an interface. The interface provides an electrical contact point passage and is orientated in a defined direction. The passage is formed when an electrical field is formed at the interface, thereby forming a Nominal Off assembly. The first and second energy gaps are different.