HEAT TREATMENT FOR IMPROVING THE QUALITY OF A TAKEN THIN LAYER

摘要

The invention relates a method for forming a structure (30) comprising a layer (1, 2) taken from a donor wafer (10) which comprises, before removal, a first layer (1) made of a germanium-containing semiconductor material. The inventive method consists (a) in forming a embrittlement area (4) in the thickness of said first germanium-containing layer (1), (b) in bonding the donor wafer (10) to a receiving wafer (20) and (c) in supplying energy for embrittling the donor wafer (10) in the embrittlement area (4). Said invention is characterised in that the stage (a) is carried out by exposing the donor wafer to the co-implantation of at least two different atomic species and the stage (c) is carried out by means of heat treatment at a temperature ranging from 300 to 400 DEG C for a time ranging from 30 min to 4 hours.