发明名称 COOLED DEPOSITION BAFFLE IN HIGH DENSITY PLASMA SEMICONDUCTOR PROCESSING
摘要 An improved deposition baffle (50), that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus. The baffle has a central circular part having slots (51) cut therein that are interrupted by electrically conductive bridges. Ribs (52) in the body between the slots have cooling fluid channel sections (60) bored therein, which are joined in series by interconnecting channel portions in a peripheral annular part of the baffle to form a continuous serpentine cooling fluid flow path from an inlet (61) to an outlet (62) in the annular peripheral part of the baffle.
申请公布号 KR20050091764(A) 申请公布日期 2005.09.15
申请号 KR20057012645 申请日期 2004.01.07
申请人 TOKYO ELECTRON LIMITED 发明人 BRCKA JOZEF;KIESHOCK MARK;PROVENCHER TIM
分类号 C23C16/507;H01J37/32;(IPC1-7):H01L21/205 主分类号 C23C16/507
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