| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for reading a cross point type variable resistive memory array capable of reading the resistance variation of a selective memory cell even in the case of a large capacity memory array. <P>SOLUTION: The cross point type memory array is obtained by arraying a plurality of memory cells comprising variable resistive elements respectively in the direction of rows and in the direction of columns, connecting respectively one end of memory cells in the same column to a common bit line, and connecting the other ends of the memory cells in the same row to a common word line. In a state where a selected memory cell 420 and a plurality of non selected memory cells 435 are connected with a prescribed bit line in common, read voltage V<SB>read</SB>is applied to the word line with which the selected memory cell 420 is connected to select the selected memory cell 420, non selection voltage (0V) is applied to all of the other word lines with which the non selected memory cells 435 are connected respectively to set the non selected memory cells to be non selected, and current I<SB>OUT</SB>flowing through the bit line is detected to read the resistive state of the selected memory cell 420. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
