发明名称 RING FOR FILM FORMATION, SEMICONDUCTOR DEVICE MANUFACTURING EQUIPMENT, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a ring for film formation which can easily fill up a fine recess, having a high aspect ratio which is formed in the surface layer of a substrate or above the substrate, while generating almost no void, regardless of the location of the recess. SOLUTION: The ring for film formation comprises a body 14 formed of a material having an insulating property. The body 14 of the ring has an annular shape along the edge of the substrate 2, which is to be formed with a film using a material gas in a plasma state, with the inner edge 14a being formed higher than an outer part. The top face of the inner edge 14a of the body 14 of the ring is arranged at the same height as or lower than that of the principal plane 2a of the substrate 2, which is to be formed with a film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005251800(A) 申请公布日期 2005.09.15
申请号 JP20040056453 申请日期 2004.03.01
申请人 TOSHIBA CORP 发明人 OGIWARA HIROTAKA;NISHIYAMA YUKIO;UI AKIO;O TAKESHI
分类号 H01L21/31;C23C16/458;C23C16/509;H01L21/00;H01L21/336;H01L21/687;H01L29/06;(IPC1-7):H01L21/31 主分类号 H01L21/31
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