| 摘要 |
A mask for photolithography methods comprises opaque and transparent areas as well as a surface structure. For the contact with a substrate ( 10 ) to be exposed at least a few opaque areas are incorporated and at least a few transparent areas are arranged in a spaced fashion and are deep-etched down to a structural depth. In a further embodiment at least one transparent area is designed as a positively resting area ( 12 ). The structural depth in the deep-etched areas is greater than the thickness of the surface structure, at least greater than or equal to 1 mum.
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